Gallium Nitride (GaN) is all the rage in the power electronics industry. The high efficiency and power density achieved by this wide band-gap semiconductor are quickly becoming a necessity for power supply manufacturers to stay competitive and compliant with increasingly stringent energy efficiency standards.
How much do you know about GaN? As a design engineer, are you ready for the switch from silicon to GaN? How do you overcome the challenge of driving GaN transistors at high switching frequency? In a new series of short videos (in English), Power Integrations Vice President of Marketing Doug Bailey answers these questions and explains the advantages of our PowiGaN Technology:
- Part 1: What is GaN
- Part 2: GaN Reliability & Robustness
- Part 3: GaN Applications
- Part 4: PowiGaN Devices
GaN transistors dramatically lower both capacitance and resistance related energy losses compared to MOSFETs, resulting in increased efficiency and reduced heat at levels previously unachievable. This also allows switching frequency to be increased significantly. However, discrete GaN transistors can be difficult to drive. PowiGaN Technology solves this problem by seamlessly integrating the GaN switch into our InnoSwitch offline flyback switcher ICs. Just replace silicon-based InnoSwitch parts with PowiGaN-based parts in your design and enjoy the increased performance. In addition to markets like USB PD charging, where smaller and lighter chargers have a decisive advantage, the transition to reliable and robust PowiGaN devices has also been proven valuable in TVs, refrigerators, and many other applications.
To learn more, see the full lineup of PowiGaN devices and start your next design with PowiGaN-based ICs using our PI Expert Online software. It turns your specifications into ready-to-build designs within minutes.