Infineon Technologies AG enters high volume production of a comprehensive portfolio of 1200 V CoolSiC™ MOSFET devices. They are rated from 30 mΩ to 350 mΩ and implemented into TO247-3 and TO247-4 housings. The expansion includes a surface mount device (SMD) portfolio and a 650 V CoolSiC MOSFET product family, both to be launched soon. With these products, Infineon addresses the fast growing demand for energy-efficient SiC solutions in power conversion schemes such as battery charging infrastructure, energy storage solutions, photovoltaic inverters, uninterruptable power supplies (UPS), motor drives as well as server and telecom switched-mode-power supplies (SMPS).
This information is available online at
https://www.infineon.com/cms/en/about-infineon/press/market-news/2019/INFIPC201905-066.html