At electronica 2018 Infineon Technologies AG showcased the benefits of its gallium nitride (GaN) solutions: CoolGaN™ 600 V e-mode HEMTs and GaN EiceDRIVER™ ICs. They offer a higher power density enabling smaller and lighter designs, lower overall system cost and operating expense as well as a reduction in capital expenditure. With the introduction of its CoolGaN 600 V enhancement mode (e-mode) HEMTs and GaN EiceDRIVER gate driver ICs, Infineon is currently the only company in the market offering a full-spectrum portfolio of all power technologies – silicon (Si), silicon carbide (SiC) and GaN.
This information is available online at
https://www.infineon.com/cms/en/about-infineon/press/market-news/2018/INFPMM201811-014.html