Texas Instruments (TI) introduces a new 60-V N-channel power FemtoFET power transistor that provides the industry’s lowest resistance that is 90 percent below traditional 60-V load switches, reducing power loss in end-systems. The CSD18541F5 is offered in a tiny 1.53-mm-by-0.77-mm silicon-based package that has an 80 percent smaller footprint than load switches in SOT-23 packages.
The CSD18541F5 metal-oxide semiconductor field-effect transistor (MOSFET) maintains a typical on-resistance (Rdson) of 54-m and is designed and optimized to replace standard small-signal MOSFETs in space-constrained industrial load-switch applications. The tiny land grid array (LGA) package features a 0.5-mm pitch between pads for easy mounting.
For more information and samples, see http://www.ti.com/CSD18541F5-pr-eu.
