ON Semiconductor (Nasdaq: ON), driving energy efficiency innovations, has introduced a new series of insulated gate bipolar transistors (IGBTs) which utilise its proprietary Ultra Field Stop trench technology. The NGTB40N120FL3WG, NGTB25N120FL3WG and NGTB40N120L3WG are designed to deliver elevated levels of operational performance in order to meet the exacting demands of modern switching applications. These 1200 volt (V) devices are able to achieve industry-leading total switching loss (Ets) characteristics; the remarkable improvement in performance is attributable in part to a very wide highly activated field-stop layer & optimised co-pack diode.
The NGTB40N120FL3WG has an Ets of 2.7 millijoules (mJ), while the NGTB25N120FL3WG has an Ets of 1.7 mJ. Both devices have a VCEsat of 1.7 V at their respective rated currents. The NGTB40N120L3WG is optimized for low conduction losses and has a VCEsat of 1.55 V, at rated current, with an Ets of 3 mJ. The new Ultra field stop products are co-packaged with a fast recovery diode that has soft turn-off characteristics and still offers minimal reverse recovery losses. The NGTB25N120FL3WG and NGTB40N120FL3WG are highly suitable for use in Uninterruptible Power Supplies (UPS) and solar inverters, whereas the NGTB40N120L3WG is mainly targeted at use in motor drives.
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